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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4981 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 100 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 7 Collector current-Peak 14 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 1.5 2 25 150 -55~150 UNIT V V V A A A A W ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4981 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated volatge IC=3.5A ; VCE=2V IC=0.7A ; VCE=10V 70 50 0.1 mA 0.1 mA CONDITIONS IC=0.1A ;IB=0 IC=3.5A; IB=0.2A IC=3.5A; IB=0.2A MIN 80 0.3 1.2 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Switching times ton ts tf NDU ICO E SEM ANG INCH Turn-on time Storage time IC=3.5A;IB1=0.35A IB2=0.35A ,RL=8| VBB2=4V Fall time TOR 0.3 1.5 0.2 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4981 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 |
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